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IRF430 MOSFET Transistor

The IRF430 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF430 transistor as follows.

Circuit diagram symbol of the IRF430 transistor

IRF430 Transistor Specification

Transistor Code IRF430
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 40nC

UXPython is not the creator or an official representative of the IRF430 MOSFET transistor. You can download the official IRF430 MOSFET transistor datasheet to get more infromation about this transistor.

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