IRF423 MOSFET Transistor

The IRF423 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF423 transistor as follows.

IRF423 Transistor Specification

Transistor Code		IRF423
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204AA
Drain-Source Voltage (Maximum)	VDS	450V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V

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