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IRF4104L MOSFET Transistor

The IRF4104L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF4104L transistor as follows.

Circuit diagram symbol of the IRF4104L transistor

IRF4104L Transistor Specification

Transistor Code IRF4104L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0055Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 660pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 130nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 68nC

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