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IRF3808 MOSFET Transistor

The IRF3808 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3808 transistor as follows.

Circuit diagram symbol of the IRF3808 transistor

IRF3808 Transistor Specification

Transistor Code IRF3808
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 140A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 330W
Total Gate Charge 150nC

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