IRF3717PBF MOSFET Transistor

The IRF3717PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3717PBF transistor as follows.

IRF3717PBF Transistor Specification

Transistor Code		IRF3717PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0044Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		930pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		2.45V
Total Gate Charge		22nC

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