IRF3711S MOSFET Transistor

The IRF3711S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3711S transistor as follows.

IRF3711S Transistor Specification

Transistor Code		IRF3711S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		1770pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		220nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		29nC

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