IRF3710PBF MOSFET Transistor

The IRF3710PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3710PBF transistor as follows.

IRF3710PBF Transistor Specification

Transistor Code		IRF3710PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		130nC

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