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IRF3709ZS MOSFET Transistor

The IRF3709ZS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3709ZS transistor as follows.

Circuit diagram symbol of the IRF3709ZS transistor

IRF3709ZS Transistor Specification

Transistor Code IRF3709ZS
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 87A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0063Ohm
Power Dissipation (Maximum) PD 79W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 2.25V
Total Gate Charge 17nC

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