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IRF3709PBF MOSFET Transistor

The IRF3709PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3709PBF transistor as follows.

Circuit diagram symbol of the IRF3709PBF transistor

IRF3709PBF Transistor Specification

Transistor Code IRF3709PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 1064pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 171nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 27nC

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