IRF3709LPBF MOSFET Transistor

The IRF3709LPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3709LPBF transistor as follows.

IRF3709LPBF Transistor Specification

Transistor Code		IRF3709LPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		1064pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		171nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		27nC

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