IRF3708S MOSFET Transistor

The IRF3708S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3708S transistor as follows.

IRF3708S Transistor Specification

Transistor Code		IRF3708S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	62A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	87W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		24nC

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