IRF3706PBF MOSFET Transistor

The IRF3706PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3706PBF transistor as follows.

IRF3706PBF Transistor Specification

Transistor Code		IRF3706PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	77A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	88W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		2V

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