IRF3703PBF MOSFET Transistor

The IRF3703PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3703PBF transistor as follows.

IRF3703PBF Transistor Specification

Transistor Code		IRF3703PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	210A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		3000pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		123nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		209nC

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