IRF3610SPBF MOSFET Transistor

The IRF3610SPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3610SPBF transistor as follows.

IRF3610SPBF Transistor Specification

Transistor Code		IRF3610SPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	103A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0116Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		100nC

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