IRF3610S MOSFET Transistor

The IRF3610S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3610S transistor as follows.

IRF3610S Transistor Specification

Transistor Code		IRF3610S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	103A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0116Ohm
Power Dissipation (Maximum)	PD	333W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		100nC

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