IRF360 MOSFET Transistor

The IRF360 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF360 transistor as follows.

IRF360 Transistor Specification

Transistor Code		IRF360
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		4200pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		210nC

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