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IRF3415S MOSFET Transistor

The IRF3415S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3415S transistor as follows.

Circuit diagram symbol of the IRF3415S transistor

IRF3415S Transistor Specification

Transistor Code IRF3415S
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 43A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.042Ohm
Power Dissipation (Maximum) PD 200W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 133.3nC

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