IRF3415L MOSFET Transistor

The IRF3415L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3415L transistor as follows.

IRF3415L Transistor Specification

Transistor Code		IRF3415L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		133.3nC

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