IRF331R MOSFET Transistor

The IRF331R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF331R transistor as follows.

IRF331R Transistor Specification

Transistor Code		IRF331R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204AA
Drain-Source Voltage (Maximum)	VDS	350V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		4V

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