IRF321 MOSFET Transistor

The IRF321 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF321 transistor as follows.

IRF321 Transistor Specification

Transistor Code		IRF321
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204AA
Drain-Source Voltage (Maximum)	VDS	350V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V

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