IRF3000PBF MOSFET Transistor

The IRF3000PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF3000PBF transistor as follows.

IRF3000PBF Transistor Specification

Transistor Code		IRF3000PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		940pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.2nS
Gate-Threshold Voltage (Maximum)		5V

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