IRF2807ZS MOSFET Transistor

The IRF2807ZS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF2807ZS transistor as follows.

IRF2807ZS Transistor Specification

Transistor Code		IRF2807ZS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	89A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0094Ohm
Power Dissipation (Maximum)	PD	170W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		71nC

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