IRF2807PBF MOSFET Transistor

The IRF2807PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF2807PBF transistor as follows.

IRF2807PBF Transistor Specification

Transistor Code		IRF2807PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	82A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		160nC

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