IRF2805S MOSFET Transistor

The IRF2805S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF2805S transistor as follows.

IRF2805S Transistor Specification

Transistor Code		IRF2805S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	135A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		150nC

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