IRF2805PBF MOSFET Transistor

The IRF2805PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF2805PBF transistor as follows.

IRF2805PBF Transistor Specification

Transistor Code		IRF2805PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		1190pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		150nC

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