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IRF2804S-7P MOSFET Transistor

The IRF2804S-7P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF2804S-7P transistor as follows.

Circuit diagram symbol of the IRF2804S-7P transistor

IRF2804S-7P Transistor Specification

Transistor Code IRF2804S-7P
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 320A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0016Ohm
Power Dissipation (Maximum) PD 330W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 170nC

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