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IRF260C MOSFET Transistor

The IRF260C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF260C transistor as follows.

Circuit diagram symbol of the IRF260C transistor

IRF260C Transistor Specification

Transistor Code IRF260C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.055Ohm
Power Dissipation (Maximum) PD 280W
Drain-Source Capacitance 1200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS

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