IRF260B MOSFET Transistor

The IRF260B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF260B transistor as follows.

IRF260B Transistor Specification

Transistor Code		IRF260B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PB
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS

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