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IRF250C MOSFET Transistor

The IRF250C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF250C transistor as follows.

Circuit diagram symbol of the IRF250C transistor

IRF250C Transistor Specification

Transistor Code IRF250C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247AB
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 780pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 86nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 140nC

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