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IRF243 MOSFET Transistor

The IRF243 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF243 transistor as follows.

Circuit diagram symbol of the IRF243 transistor

IRF243 Transistor Specification

Transistor Code IRF243
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.22Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 360pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 4V

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