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IRF231 MOSFET Transistor

The IRF231 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF231 transistor as follows.

Circuit diagram symbol of the IRF231 transistor

IRF231 Transistor Specification

Transistor Code IRF231
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

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