IRF1405PBF MOSFET Transistor

The IRF1405PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1405PBF transistor as follows.

IRF1405PBF Transistor Specification

Transistor Code		IRF1405PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	169A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0053Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		1210pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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