IRF1310NSPBF MOSFET Transistor

The IRF1310NSPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1310NSPBF transistor as follows.

IRF1310NSPBF Transistor Specification

Transistor Code		IRF1310NSPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		110nC

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