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IRF130SMD05 MOSFET Transistor

The IRF130SMD05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF130SMD05 transistor as follows.

Circuit diagram symbol of the IRF130SMD05 transistor

IRF130SMD05 Transistor Specification

Transistor Code IRF130SMD05
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD05
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28.5nC

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