IRF1104PBF MOSFET Transistor

The IRF1104PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1104PBF transistor as follows.

IRF1104PBF Transistor Specification

Transistor Code		IRF1104PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	170W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		114nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		93nC

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