IRF1010NS MOSFET Transistor

The IRF1010NS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1010NS transistor as follows.

IRF1010NS Transistor Specification

Transistor Code		IRF1010NS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		120nC

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