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IRF1010EZPBF MOSFET Transistor

The IRF1010EZPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1010EZPBF transistor as follows.

Circuit diagram symbol of the IRF1010EZPBF transistor

IRF1010EZPBF Transistor Specification

Transistor Code IRF1010EZPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0085Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 420pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 90nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 58nC

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