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IRF1010EZ MOSFET Transistor

The IRF1010EZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF1010EZ transistor as follows.

Circuit diagram symbol of the IRF1010EZ transistor

IRF1010EZ Transistor Specification

Transistor Code IRF1010EZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 84A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0085Ohm
Power Dissipation (Maximum) PD 140W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 58nC

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