IRF100S201 MOSFET Transistor

The IRF100S201 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF100S201 transistor as follows.

IRF100S201 Transistor Specification

Transistor Code		IRF100S201
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	192A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0042Ohm
Power Dissipation (Maximum)	PD	441W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		97nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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