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IRF100B201 MOSFET Transistor

The IRF100B201 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF100B201 transistor as follows.

Circuit diagram symbol of the IRF100B201 transistor

IRF100B201 Transistor Specification

Transistor Code IRF100B201
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 192A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 441W
Drain-Source Capacitance 660pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 97nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 170nC

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