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IPW90R800C3 MOSFET Transistor

The IPW90R800C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW90R800C3 transistor as follows.

Circuit diagram symbol of the IPW90R800C3 transistor

IPW90R800C3 Transistor Specification

Transistor Code IPW90R800C3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 900V
Drain Current (Maximum) ID 6.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 104W
Total Gate Charge 42nC

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