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IPW90R1K2C3 MOSFET Transistor

The IPW90R1K2C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW90R1K2C3 transistor as follows.

Circuit diagram symbol of the IPW90R1K2C3 transistor

IPW90R1K2C3 Transistor Specification

Transistor Code IPW90R1K2C3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 900V
Drain Current (Maximum) ID 5.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 83W
Total Gate Charge 29nC

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