IPW90R1K2C3 MOSFET Transistor

The IPW90R1K2C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW90R1K2C3 transistor as follows.

IPW90R1K2C3 Transistor Specification

Transistor Code		IPW90R1K2C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	900V
Drain Current (Maximum)	ID	5.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	83W
Total Gate Charge		29nC

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