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IPW65R280E6 MOSFET Transistor

The IPW65R280E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW65R280E6 transistor as follows.

Circuit diagram symbol of the IPW65R280E6 transistor

IPW65R280E6 Transistor Specification

Transistor Code IPW65R280E6
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 650V
Drain Current (Maximum) ID 13.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.28Ohm
Power Dissipation (Maximum) PD 104W
Total Gate Charge 45nC

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