IPW65R080CFD MOSFET Transistor

The IPW65R080CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW65R080CFD transistor as follows.

IPW65R080CFD Transistor Specification

Transistor Code		IPW65R080CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	43.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	391W
Total Gate Charge		170nC

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