IPW65R048CFDA MOSFET Transistor

The IPW65R048CFDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW65R048CFDA transistor as follows.

IPW65R048CFDA Transistor Specification

Transistor Code		IPW65R048CFDA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		65F6048A
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	63.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	500W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		270nC

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