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IPW65R041CFD MOSFET Transistor

The IPW65R041CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW65R041CFD transistor as follows.

Circuit diagram symbol of the IPW65R041CFD transistor

IPW65R041CFD Transistor Specification

Transistor Code IPW65R041CFD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Transistor SMD Code 65F6041
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 68.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.041Ohm
Power Dissipation (Maximum) PD 500W
Drain-Source Capacitance 400pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 300nC

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