IPW60R299CP MOSFET Transistor

The IPW60R299CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R299CP transistor as follows.

IPW60R299CP Transistor Specification

Transistor Code		IPW60R299CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.299Ohm
Power Dissipation (Maximum)	PD	96W
Total Gate Charge		22nC

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