IPW60R190P6 MOSFET Transistor

The IPW60R190P6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R190P6 transistor as follows.

IPW60R190P6 Transistor Specification

Transistor Code		IPW60R190P6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		6R190P6
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	151W
Drain-Source Capacitance		76pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4.5V

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