IPW60R190C6 MOSFET Transistor

The IPW60R190C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R190C6 transistor as follows.

IPW60R190C6 Transistor Specification

Transistor Code		IPW60R190C6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	20.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	151W
Total Gate Charge		58nC

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