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IPW60R180C7 MOSFET Transistor

The IPW60R180C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R180C7 transistor as follows.

Circuit diagram symbol of the IPW60R180C7 transistor

IPW60R180C7 Transistor Specification

Transistor Code IPW60R180C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Transistor SMD Code 60C7180
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 68W
Drain-Source Capacitance 18pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 4V

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